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At present the following Ion Beam Analytical techniques are possible to use:

PIXE NRA Channeling
RBS ERDA Ion Microbeam Tomography
STIM IBIC Ion Microbeam Microfabrication

PIXE RBS NRA STIM IBIC ERDA Channeling Tomography Microfabrication

More details about PIXE

When a fast moving charged particle collides with an atom there is a reasonable probability that an electron will be ejected from an inner atomic shell. Subsequently, the electrons in the oter shells re-arrange themselves with the emission of a quantum of energy (X-ray), the energy of which is characteristic of the parent atom. The measurement of these characteristic X-rays enables the chemical composition of a sample to be determined with high quantitative accuracy and sensitivity (10-20 ppm for Na to Cl , and 1-10 ppm for Ca and higher in the periodic table).

More details about RBS

As the ion traverses the sample, there is a small probability that a direct elastic nuclear collision will also occur causing the ion to recoil out of the sample. By masuring the energy of recoiling ions, information can be obtained on the concentration a nd depth distribution of major constituents of the sample, such as the light element matrix C, N and O. RBS is complementary to PIXE and allows the sample matrix to be characterised, thus making quantitative measurements of the trace e lements more accurate.

More details about STIM

For most biological samples (tissue sections, isolated cells), the high energy particle beam passes through the sample, loosing energy by collisions with electrons. By measuring the energy loss of individual particles in the transmitted beam, information on the density or thickness of the specimen can be obtained.


Nuclear Reaction Analysis: Measurement of reaction products such as gamma rays, alpha particles and protons following nuclear reactions between the incident ion and the target atoms. Used mainly for light ions up to Mg in the periodic table and thier isot opes.


Elastic Recoil Detection Analysis: Measurement of recoiling atoms following elastic nuclear collisions at a glancing angle. Used mainly for profiles of very light ions such as hydrogen or deuterium.


Ion Beam Induced Current is a technique which images the active regions in micro-electronic devices, by measuring the induced current caused by a penetrating beam of focused ions. This technique enables active regions to be assessed on-line for resistance to radiation.


If the direction of the ion beam is aligned with a plane or axis of a crystal, then channeling can occur and the ions travel through the crystal with much reduced energy loss. This phenomenon can be used to measure crystal quality and the mapping of the l attice plane directions (strain measurements) when used in conjunction with PIXE and RBS. When used with STIM, the technique can provide information on faults such as lattice distortion and disloc ations at depth in the crystal.

Ion Microbeam Tomography

The use of a penetrating focused beam of high energy ions to produce information at depth on the elemental constituents and internal structure of a specimen. By scanning the beam over the specimen at many orientations, 3D information can be obtained and 3 D images generated.

Ion Microbeam Microfabrication

The use of finely focused and penetrating high energy ion beams to form deep (~10 µm) and narrow (~100 nm) channels in resists used in lithography.